| PART |
Description |
Maker |
| S9978 |
: 0.33; Condition IF at VF (mA): 1; C (pF) max: 2.8; Condition VR at C (V): 1; Condition f at C (MHz): 1; Package: URP
|
Hamamatsu Photonics
|
| CRF03 |
Zener Diode; Application: General; Pd (mW): 400; Vz (V): 1.6 to 1.8; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V): ESD (kV
|
Toshiba Corporation
|
| TMP87CM53F |
Zener Diode; Application: General; Pd (mW): 500; Vz (V): 11.1 to 11.6; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V): ESD (kV) min: -; Package: DO-35
|
Toshiba Corporation
|
| TMP86CS64AFG |
Zener Diode; Application: General; Pd (mW): 500; Vz (V): 29.2 to 30.6; Condition Iz at Vz (mA): 2; C (pF) max: -; Condition VR at C (V): ESD (kV) min: -; Package: DO-35
|
Toshiba Corporation
|
| TMP86C822UG |
Zener Diode; Application: General; Pd (mW): 200; Vz (V): 3.10 to 3.35; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V): ESD (kV) min: -; Package: MPAK
|
Toshiba Corporation
|
| JTOS-200P |
Zener Diode; Application: General; Pd (mW): 400; Vz (V): 5.5 to 5.8; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V): ESD (kV) min: -; Package: MHD
|
Mini-Circuits
|
| TMP86C807NG |
Zener Diode; Application: General; Pd (mW): 200; Vz (V): 24.54 to 25.57; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V): ESD (kV) min: -; Package: MPAK
|
Toshiba Corporation
|
| ISL9V5036S3ST |
Zener Diode; Application: General; Pd (mW): 400; Vz (V): 5.3 to 5.6; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V): ESD (kV) min: -; Package: MHD
|
Fairchild Semiconductor Corporation
|
| TMP86CP27AFG |
Zener Diode; Application: General; Pd (mW): 500; Vz (V): 1.9 to 2.1; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V):   ESD (kV) min: -; Package: DO-35 8位微控制
|
Toshiba, Corp.
|
| TMP86PS27FG |
Zener Diode; Application: General; Pd (mW): 500; Vz (V): 6.6 to 6.9; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V):   ESD (kV) min: -; Package: DO-35 8位微控制
|
Toshiba, Corp.
|
| TMP86FH12MG |
Zener Diode; Application: General; Pd (mW): 500; Vz (V): 36.4 to 38.0; Condition Iz at Vz (mA): 2; C (pF) max: -; Condition VR at C (V):   ESD (kV) min: -; Package: DO-35 8位微控制
|
Toshiba, Corp.
|
| TC7SG34FU |
Zener Diode; Application: General; Pd (mW): 500; Vz (V): 3.4 to 3.8; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V):   ESD (kV) min: -; Package: LLD 非变
NON-Inverter
|
Toshiba, Corp.
Toshiba Semiconductor
|
